Monocrystalline solar panels vs. N-hom TOPCon|LID, Conversion Efficiency, Degradation Rate

Mono-crystalline PERC modules tau ntsib thawj zaug - xyoo degradation ntawm 3% ( ntsuas qhov nruab nrab 1.92%) vim yog boron-oxygen (B-O) complex defects, ua rau lub zog loj poob ntawm lub neej;

thaum N-hom TOPCon, siv phosphorus-doped wafers, zam lub BO-LID mechanism, ua tiav thawj- xyoo degradation<1% (outdoor demonstration only 0.51%).

Tiv tauj peb tam sim no

Yinchuan ua qauv qhia cov ntaub ntawv qhia: Raws li qhov sib npaug irradiation, TOPCon modules degrade tsawg dua 37% ntawm PERC modules tom qab 6000 teev.

TOPCon's tunnel oxide txheej thiab poly- silicon passivation qauv ib txhij ua rau lub ntsej muag recombination,ua rau lub teeb pom kev ua haujlwm (lab) -induced degradation tus nqi qis li 0.26%.

Kev txo qis qis ua ke nrog 24% -26% kev hloov pauv kev ua haujlwm kom zoo ua rau TOPCon ua tiav3-5 xyoo hluav taws xob nce them tus nqi pib nqinyob rau hauv loj -scale fais fab nroj tsuag, reshaping siab - efficiency module xaiv logic.

Tsim thiab ua kom muaj Boron-Oxygen Complexes

Lub ntsiab mechanism ntawm LID yog tsim ntawm boron-oxygen complexes (B-O) nyob rau hauv illumination. Hauv P- hom wafers doped nrog boron, boron atoms ua ke nrog cov pa oxygen interstitial kom tsim tsis ruaj khov B-O tsis xws luag:

· Kev Tsim Kho: Under illumination intensity >1 mW / cm², boron- cov pa oxygen nkag mus rau hauv lub xeev nquag (State B), ua rau cov neeg nqa khoom tsawg lub neej poob ntawm 1000μs mus rau qis dua 500μs.

· Temperature Influence: Rau txhua txhua 10℃kub nce, B-O complex tsim tus nqi nce 2-3 zaug. Piv txwv li, ntawm 75 degree, lub LID degradation tus nqi ntawm PERC modules yog 4.7 npaug ntawm 25 degree.

· Oxygen Cov ntsiab lus sib txawv: Mono-crystalline silicon, zus siv quartz crucibles, muaj cov pa oxygen siab ntawm 10-14 ppma, thaum multi-crystalline silicon los ntawm casting tsuas muaj 1-2 ppma. Qhov no ua rau 2-3 zaug siab dua LID degradation hauv mono-Si piv rau ntau-Si.

Txheej Txheem Parameter Amplification nyhuv ntawm LID

Cov txheej txheem tsim cell ncaj qha cuam tshuam rau kev ua haujlwm ntawm B-O complexes:

·Sintering kub: When sintering peak temperature >850 degree, hydrogen los ntawm cov txheej txheem passivation diffuses rau hauv silicon substrate, sib txuas nrog boron los tsim cov teeb meem rov qab. Kev sim qhia tias txhua txhua 50℃nce hauv sintering kub, LeTID degradation tus nqi nce 0.8%.

·Hlau Contamination: Hlau (Fe) impurities ua ke nrog boron los ua Fe-B khub, uas decompose rau hauv Feⁱ thiab Bⁱ⁰ nyob rau hauv illumination, tsim ntxiv recombination chaw. 1 ppm hlau paug tuaj yeem nce LID degradation los ntawm 0.5%.

·Tsis txaus Hydrogen Passivation: Thaum cov ntsiab lus hydrogen nyob rau hauv cov txheej txheem passivation (xws li AlOx/SiNx) yog<1×10¹⁹ atoms/cm³, it cannot effectively passivate B-O defects. TOPCon requires 40% less hydrogen due to the absence of boron doping, improving defect regeneration efficiency.

Kev sib raug zoo ntawm Cell Structure thiab LID Sensitivity

Cov qauv ntawm tes sib txawv qhia qhov sib txawv tseem ceeb hauv LID teb:

·PERC Cells: Cov txheej txheem rov qab ua kom ntev dua - wavelength lub teeb nqus, ua rau cov cab kuj siab dua thiab txhim kho B-O txoj haujlwm nyuaj. Kev ntsuas qhia tau hais tias PERC LID degradation yog 1.8 npaug ntawm cov pa txhuas rov qab qhov chaw (Al-BSF) hlwb.

·TOPCon Cells: Thaum lub qhov oxide txheej (SiOx) thickness tswj ntawm 1.5nm, nto recombination tshaj tawm yog<0.5 cm/s, suppressing defect activation. Lab data indicates TOPCon's LID degradation rate is 82% lower than PERC.

·Heterojunction (HJT) Cells: Lub amorphous silicon passivation txheej qhia txog qhov tsis xws luag, tab sis 90% ntawm lub xeev cuam tshuam tuaj yeem kho tau los ntawm hydrogen annealing, ua kom LID degradation qis dua 0.3%.

Environmental Factors thiab Dynamic Teb ntawm LID

Mechanisms ntawm sab nraum ib puag ncig accelerating LID:

·UV hluav taws xob: Ultraviolet light (280-320nm) induces oxygen vacancy generation, which combines with boron to form complexes. Zhangbei demonstration data shows, in regions with annual UV irradiation >2000 kWh / m², PERC modules muaj kev paub ntxiv 0.7% LID.

·Kub kub thiab av noo: Nyob rau hauv 85℃/ 85%RH tej yam kev mob, noo noo nkag mus rau hydrolysis ntawm boron -oxygen complexes, generating mobile ions thiab accelerating recombination center diffusion. Damp heat test (1000 teev) ua rau PERC module LID degradation ntawm 1.2%.

·Mechanical Stress: Module encapsulation stress ua rau micro- tawg hauv wafers. Oxygen concentration gradients ntawm cov lus qhia tawg ua rau B-O complex tsim. Thaum lub sij hawm thermal cycling (-40℃~ 85 degree) kev ntsuam xyuas, tawg modules muaj 0.9% siab dua LID degradation dua li qub modules.

Cov ntaub ntawv -Driven LID Prediction Model

Physics-raws li kev twv ua ntej LID yuav tsum muaj kev sib koom ua ke ntau- qhov tsis sib xws:

·Cov Lus Qhia Tseem Ceeb: Boron concentration (B), Oxygen concentration (O), Cov cab kuj zoo concentration (Δn), Kub (T).

·Empirical Formula: LID degradation rate (%)=0.003×B×O×exp(-Ea/(kT)), qhov twg Ea=0.85eV (activated energy of boron-}oxygen recombination), k yog Boltzmann tas li.

·Kev ntsuas ntsuas: Kev txheeb cais ntawm 1000 PERC hlwb qhia cov qauv kev twv ua ntej yuam kev<±0.2%, can guide wafer doping process optimization.

Kev sib piv tus nqi degradation

Laboratory Light-Induced Degradation Test Conditions and Data

Standardized LID kuaj cov txheej txheem:

·Illumination koob5 kWh/m² (AM1.5G spectrum, 1000 W/m² intensity)

·Kev Tswj Kub Kub: 25℃qhov kub thiab txias

·Test Duration: Nruam illumination rau 100 teev

Boron Doping Alternatives

Cov teeb meem hauv paus: P-hom PERC hlwb raug kev txom nyem ua ntej- xyoo degradation mus txog 3% (lab cov ntaub ntawv) vim yog boron-oxygen complexes (BO-LID).

Kev daws teeb meem:

·Gallium (Ga) Doping: Hloov boron nrog gallium li dopant, zam BO-LID cov tshuaj tiv thaiv txoj kev. Gallium qhov sib cais coefficient (0.35) qis dua boron's (0.8), yuav tsum tau hloov kho ntawm thermal teb faib:

o Crystal kev loj hlob kub: 1450℃→ 1520℃(txo Ga volatilization)

o Radial kub gradient:<5°C/cm (improves crystal quality)

o Ntsuas cov nyhuv: LID degradation txo los ntawm 3% mus rau 0.7%, tab sis resistivity fluctuation ± 12%.

·Indium (In) Co-doping: Boron-indium co-doping (B: Hauv=10:1) ntxiv txo oxygen solubility:

Oxygen ntsiab lus: 10ppma → 5ppma

o Cov neeg nqa khoom tsawg lub neej: 500μs → 800μs

o Tus nqi nce: Wafer tus nqi nce $ 0.005 / W.

Txheej txheem Annealing:

·Tsawg-Tsub Annealing (LTA):

o Kub: 200℃→ 300 degree

o Sijhawm: 10 feeb → 30 feeb

o Cov nyhuv: Activates hydrogen passivation, kho boron -oxygen defects

o Cov ntaub ntawv: PERC cell LID degradation txo los ntawm 0.5%.

Passivation Layer Upgrade

Nto Passivation Technology:

·AlOx/SiNx Stack:

o Thickness tswj: AlOx 3nm + SiNx 80nm

o Nto recombination tshaj tawm:<10 cm/s (conventional PERC 20 cm/s)

o Lab data: Minority carrier lifetime increased to >1500μs.

Rov qab Passivation Optimization:

·SiNx Thickness Kho:

o Pa: 120nm → Optimized: 150nm

o Cov nyhuv: Txo boron diffusion mus rau nram qab, suppresses LeTID

o Qhov tshwm sim: LeTID degradation txo los ntawm 1.17% mus rau 0.3%.

Kev ua haujlwm loj hlob mus txog 25.4%(SunPower Maxeon 7),Laboratory cov ntaub ntawv 26.8%, mus txog rau28.7% theoretical txwv;

PERC nyob twj ywm ntawm23.5%. TOPCon tus kub coefficient yog-0.29% / degree, ob-faciality85%+nce zog tawm los ntawm20%, degradation tus nqi<0.4% per year, 30-xyoo zog tuav87%.

Theoretical txwv

Lub cev ciam teb ntawm Mono-crystalline PERC

Mono-crystalline PERC hlwb, raws li P- hom wafers, muaj qhov kev txwv theoretical efficiency ntawm 24.5% (Shockley-Queisser txwv).

Tus nqi no yog txiav txim los ntawm silicon bandgap (1.1 eV) thiab hnub ci spectrum match.

Hauv kev tsim khoom loj, boron doping ua rau boron-oxygen complexes (B-O) ua rau lub teeb-induced degradation (LID), nrog rau thawj- xyoo efficiency poob ntawm 2-3%.